advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower on-resistance r ds(on) 8.5m fast switching characteristic i d 75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 4 mj i ar avalanche current a t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.9 /w rthj-a maixmum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 138 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 1.11 450 30 continuous drain current, v gs @ 10v 66 pulsed drain current 1 260 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 75 parameter rating drain-source voltage 60 200812023 1 AP95T06AGP rohs-compliant product g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-220(p) the to-220 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 8.5 m ? ?
ap95t06ag p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 5.0v 4.5v v g = 4 .0v 0 40 80 120 160 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0 v 5.0v 4.5v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 6 8 10 12 14 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP95T06AGP 0 2 4 6 8 10 12 14 0 1020304050607080 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =36v v ds =48v i d =45a q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.60 3.10 3.60 l4 14.70 15.50 16.00 l5 6.30 6.50 6.70 3.50 3.70 3.90 d 8.40 8.90 9.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 symbols advanced power electronics corp. e b b1 e d l3 l4 l1 l2 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss sequence if last "s" is numerical letter : rohs product if last "s" is english letter : hf & rohs product 95t06agp ywwsss logo l5 meet rohs requirement for low voltage mosfet only e1 5
|
